论文标题
单层MOS $ _2 $中光活性缺陷的超敏感灭绝测量值
Ultra-Sensitive Extinction Measurements of Optically Active Defects in Monolayer MoS$_2$
论文作者
论文摘要
我们利用腔体增强的灭绝光谱来直接量化氦离子轰击产生的MOS $ _2 $中缺陷的光学吸收。我们实现了特定缺陷模式的高光谱成像，检测极限低于0.01％灭绝，对应于$ 10^{11} $ cm $ $^{ - 2} $的可检测缺陷密度。相应的光谱揭示了广泛的子隙吸收，与MOS $ _2 $中与硫的空位结合激子有关的理论预测一致。我们的结果凸显了腔体增强的灭绝光谱作为检测具有弱吸收较弱的纳米级薄膜光学转变的有效手段，适用于广泛的材料。
We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being consistent with theoretical predictions related to sulfur vacancy-bound excitons in MoS$_2$. Our results highlight cavity-enhanced extinction spectroscopy as efficient means for the detection of optical transitions in nanoscale thin films with weak absorption, applicable to a broad range of materials.
