论文标题
单层pt $ _2 $ hgse $ _3 $带有交换领域的可调拓扑阶段
Tunable topological phases in monolayer Pt$_2$HgSe$_3$ with exchange fields
论文作者
论文摘要
我们研究了单层Jacutingaite(Pt $ _2 $ hgse $ _3 $)的拓扑阶段,这些阶段在考虑自旋轨道耦合(SOC)的竞争效果(SOC),磁性交换相互作用以及交错的Sublattice势V。交流潜能和交流领域之间的互动提供了实现不同的近距离层的可能性。 By analyzing the Berry curvatures and computing the Chern numbers and Hall conductivities, we demonstrate that the system is time-reversal-symmetry-broken quantum spin Hall insulator when $m_b<λ_{so}$, where $m_b$ is the exchange field operating on the bottom Hg sublattice and $λ_{so}$ is the intrinsic SOC. For $m_b > λ_{so}$ and in the presence of Rashba SOC, we find that the band gap at valley $K(K^{\prime})$ is topologically trivial (non-trivial) with Chern number $C=1$ and valley Chern number $C_v=-1$, indicating that the system is valley-polarized quantum anomalous Hall insulator.我们表明,通过逆转交换场的标志,将每个山谷的拓扑交换(Chern编号变为$ C = -1 $)。随着V的增加,系统将过渡到山谷偏振金属和量子谷霍尔相位。沿着相边界,我们观察到一个单迪拉克锥半分状态。这些发现更多地说明了实现和控制Spintronics和Valleytronics设备中拓扑阶段的可能性。
We investigate topological phases of monolayer jacutingaite (Pt$_2$HgSe$_3$) that arise when considering the competing effects of spin-orbit coupling (SOC), magnetic exchange interactions, and staggered sublattice potential V. The interplay between the staggered potential and exchange field offers the possibility of attaining different topological phases. By analyzing the Berry curvatures and computing the Chern numbers and Hall conductivities, we demonstrate that the system is time-reversal-symmetry-broken quantum spin Hall insulator when $m_b<λ_{so}$, where $m_b$ is the exchange field operating on the bottom Hg sublattice and $λ_{so}$ is the intrinsic SOC. For $m_b > λ_{so}$ and in the presence of Rashba SOC, we find that the band gap at valley $K(K^{\prime})$ is topologically trivial (non-trivial) with Chern number $C=1$ and valley Chern number $C_v=-1$, indicating that the system is valley-polarized quantum anomalous Hall insulator. We show that the topology of each valley is swapped (the Chern number becomes $C=-1$) by reversing the sign of the exchange field. The system transitions to a valley-polarized metal and quantum valley Hall phase as V increases. Along the phase boundaries, we observe a single-Dirac cone semimetal states. These findings shed more light on the possibility of realizing and controlling topological phases in spintronics and valleytronics devices.