论文标题
改良的Haldane-Hubbard模型中的高阶拓扑绝缘子
Higher-order topological insulator in a modified Haldane-Hubbard model
论文作者
论文摘要
我们使用精确的对角线化计算，研究了带有三重旋转对称性的破裂的未修饰的无旋转Haldane-Hubbard模型的地面相图。不对称，相互作用和拓扑的相互作用产生了丰富的相图。与标准Haldane模型的已知手性手性金属状态相反，哈密顿量的非相互作用极限表现出具有角模式存在的高阶拓扑绝缘子。我们的研究表明，这些受对称保护的状态对存在有限相互作用是可靠的。此外，在某些参数方面，我们表明，在该模型中存在拓扑莫特绝缘子，在该模型中，非客气的拓扑散装批量共存具有与互动驱动的电荷密度 - 波，其出现的特征是$ z_2 $ - symmetry在3 $ d $ d $ asis-asising-asis-asising-asising-asising-assimatity类中破裂。
We investigate the ground-state phase diagram of a modified spinless Haldane-Hubbard model with broken threefold rotational symmetry, employing exact diagonalization calculations. The interplay of asymmetry, interactions, and topology gives rise to a rich phase diagram. The non-interacting limit of the Hamiltonian exhibits a higher-order topological insulator characterized by the existence of corner modes, in contrast to known chiral edge metallic states of the standard Haldane model. Our investigation demonstrates that these symmetry-protected states are robust to the presence of finite interactions. Furthermore, in certain regimes of parameters, we show that a topological Mott insulator exists in this model, where a non-trivial topological bulk coexists with an interaction-driven charge-density-wave, whose emergence is characterized by a $Z_2$-symmetry breaking within the 3$d$-Ising universality class.
