论文标题
2D半导体的纳米印
Nanoimprint strain-engineering of 2D semiconductors
论文作者
论文摘要
机械应变是一种强大的工具，可以调整原子薄的半导体的光学和光电特性。不均匀菌株在激子漏斗和2D材料中单光子发射器的激活中起着重要作用。在这里，我们通过纳米印度过程在2D半导体中创建一个不均匀的应变谱。我们提出了纳米印度设置，其中使用模具以受控的方式施加压力，以在加热聚合物层上的WS2单层。印刷后，通过高光谱光学成像验证了2D半导体中产生的应变。开发的纳米印刷技术是可扩展的，可以转移到商业纳米印刷机上。
Mechanical strain is a powerful tool to tune the optical and optoelectronic properties of atomically thin semiconductors. Inhomogeneous strain plays an important role in exciton funneling and the activation of single-photon emitters in 2D materials. Here, we create an inhomogeneous strain profile in a 2D semiconductor on a micrometer scale by a nanoimprint process. We present a nanoimprint setup, where a mold is used to apply pressure in a controlled way to a WS2 monolayer on a heated polymer layer. After printing, the strain created in the 2D semiconductor is verified by hyperspectral optical imaging. The developed nanoimprint technique is scalable and could be transferred to commercial nanoimprint machines.
