论文标题
从10 eV阈值CRESST-III硅检测器的子GEV暗物质的结果
Results on sub-GeV Dark Matter from a 10 eV Threshold CRESST-III Silicon Detector
论文作者
论文摘要
我们提出了暗物质颗粒与硅核的自旋相互作用横截面的限制,这些核核是根据在CRESST-III实验中运行的0.35 g目标质量质量的数据得出的。 $(1.36 \ pm 0.05)$ ev $ _ {\ text {\ text {nr}} $的基线核后坐力解决方案,目前是宏观粒子探测器的最低报告,相应的能量阈值$(10.0 \ pm 0.2 \ pm 0.2)$ _ {与以前的结果相比,160 meV/c $^2 $最高20倍。我们将观察到的低能量过量表征,并排除了晶体表面上的噪声触发和放射性污染作为主要贡献。
We present limits on the spin-independent interaction cross section of dark matter particles with silicon nuclei, derived from data taken with a cryogenic calorimeter with 0.35 g target mass operated in the CRESST-III experiment. A baseline nuclear recoil energy resolution of $(1.36\pm 0.05)$ eV$_{\text{nr}}$, currently the lowest reported for macroscopic particle detectors, and a corresponding energy threshold of $(10.0\pm 0.2)$ eV$_{\text{nr}}$ have been achieved, improving the sensitivity to light dark matter particles with masses below 160 MeV/c$^2$ by a factor of up to 20 compared to previous results. We characterize the observed low energy excess, and we exclude noise triggers and radioactive contaminations on the crystal surfaces as dominant contributions.