论文标题
高chern数字范德华磁性拓扑多层MNBI $ _2 $ te $ _4 $/hbn
High Chern number van der Waals magnetic topological multilayers MnBi$_2$Te$_4$/hBN
论文作者
论文摘要
Chern绝缘子是二维磁性拓扑材料，通过一维手性模式沿其边缘进行电力。这些模式的数量是一个拓扑不变的，称为第一个Chern Number $ c $，将量化的霍尔电导定义为$ s_ {xy} = c e^2/h $。增加$ c $对于实现低功耗拓扑电子产品的关键是至关重要的，但是到目前为止，尚无明确的解决方案，大多数现有的Chern绝缘子显示$ C = 1 $。在这里，通过使用最先进的理论方法，我们提出了一种有效的方法，用于实现MNBI中的高$ C $ CHERN绝缘子状态，$ _2 $ _2 $ TE $ _4 $ _4 $/HBN VAN DER WAALS MULTAYER MULTEARAYER异质结构。我们表明，$ n $ mnbi $ _2 $ _2 $ _4 $ $ c = 1 $由HBN单层插入的电影产生了高的Chern数字状态，其$ C = n $，其特征是$ n $ chiral Edge模式。可以在外部磁场下且没有它来实现此状态，这两种情况都导致量化的霍尔电导$ s_ {xy} = c e^2/h $。因此，我们的结果铺平了实用高$ c $量化的大厅系统的方式。
Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution of this problem so far, with the majority of existing Chern insulators showing $C=1$. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-$C$ Chern insulator state in MnBi$_2$Te$_4$/hBN van der Waals multilayer heterostructures. We show that a stack of $n$ MnBi$_2$Te$_4$ films with $C=1$ intercalated by hBN monolayers gives rise to a high Chern number state with $C=n$, characterized by $n$ chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance $S_{xy}= C e^2/h$. Our results therefore pave way to practical high-$C$ quantized Hall systems.
