论文标题
移动缺陷作为中介状态用于电荷载体捕获金属卤化物钙壶量子点
Mobile defects as mediated states for charge-carrier trapping in metal halide perovskites quantum dots
论文作者
论文摘要
金属卤化物钙钛矿量子点（MHPQD）中缺陷的迁移运动导致电荷载体陷阱变得更加复杂。我们研究了MHPQD的基础状态与使用完全配置缺陷方法的固定深度缺陷之间的移动缺陷介导的两步诱捕，在这些缺陷中，可以再现这些移动缺陷介导的所有可能的捕获过程，并且选择了其中最快的通道。我们发现，这些两步诱捕过程可以比这些直接缺陷更快地保持一个数量级，并具有适当的定位强度，这暗示着这些间接捕获应该起着至关重要的规则来确定非辐射重组损失的关键规则。这些结果为研究在最近的实验中存在迁移缺陷的情况下研究携带者的非辐射过程提供了重要的解释。此外，该模型将可用于分析电子设备中的一些关键性能相关缺陷。
The migration motion of defects in metal halide perovskites quantum dots (MHPQDs) results in charge-carrier trapping become more complicated. We study two-step trapping mediated by mobile defects between the ground state of MHPQDs and a fixed-depth defect using a full-configuration defect method, where all possible trapping processes mediated by these mobile defects could be reproduced and the fastest channels among them are picked out. We find that these two-step trapping processes could keep more one order of magnitude faster than these direct ones as mobile defect with the appropriate localization strength, which implies that these indirect trapping should play the crucial rule to determine the non-radiative recombination losses. These results provide the significant explanation for studying non-radiation processes of carriers in the presence of the migration defects in recent experiments. Moreover, this model will be available to analyze some key performance related defects in electronic devices.
