论文标题
热电PBTE-CDTE散装纳米复合材料
Thermoelectric PbTe-CdTe bulk nanocomposite
论文作者
论文摘要
热电-PBTE-CDTE半导体纳米复合材料的制备方法以Bi，I或Na掺杂的散装材料的形式，用于生产中等温度的热电学生成器。该方法利用了两个半导体的极低相互溶解度，这是由于它们的不同晶体结构而产生的，并且基于专门设计的Bridgman生长过程。结果表明，在合成复合材料的过程中，可以强迫锌 - 蓝色晶体CDTE晶粒的形成，通过以CDTE化合物的形式引入CD并选择PBTE的熔点以上，但在CDTE的融化点以上，可以强制迫使CD。 X射线衍射和SEM-EDX光谱分析以及含有2、5和10 at的纳米复合样品的基本电和热电表征。 CD中的％\％表明，使用提出的生长程序，可以同时获得N型（BI或I掺杂）和P型（Na掺杂）材料，其载体浓度为1÷5 x 10 \^{19} cm \^{ - \^{ - 3}，并均匀地分配了CDTE GRAINS，并具有100 nm的直径为100 nm。
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method takes advantage of the extremely low mutual solubility of both semiconductors, resulting from their different crystal structure, and is based on a specifically designed Bridgman growth procedure. It is shown that the formation of zinc-blende crystalline CdTe grains in the rock-salt matrix of thermoelectric PbTe can be forced during the synthesis of a composite by introducing Cd in the form of CdTe compound and choosing the growth temperature above the melting point of PbTe but below the melting point of CdTe. X-ray diffraction and SEM-EDX spectroscopy analyzes as well as basic electric and thermoelectric characterization of the nanocomposite samples containing 2, 5 and 10 at. \% of Cd showed that using proposed growth procedure, it is possible to obtain both n-type (Bi- or I-doped) and p-type (Na-doped) material with carrier concentration of 1÷5 x 10\^{19} cm\^{-3} and uniformly distributed CdTe grains with a diameter of the order of 100 nm.
